Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-12-06
2008-08-05
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185170, C365S185030, C365S185220
Reexamination Certificate
active
07408804
ABSTRACT:
A set of non-volatile storage elements is divided into subsets for soft programming in order to more fully soft-program slower soft programming elements. The entire set of elements is soft-programmed until verified as soft programmed (or until a first subset of elements is verified as soft programmed while excluding a second subset from verification). After the set is verified as soft programmed, a first subset of elements is inhibited from further soft programming while additional soft programming is carried out on a second subset of elements. The second subset can include slower soft programming elements. The second subset can then undergo soft programming verification while excluding the first subset from verification. Soft programming and verifying for the second subset can continue until it is verified as soft programmed. Different step sizes can be used for increasing the size of the soft programming signal, depending on which subset is being soft programmed and verified.
REFERENCES:
patent: 4489400 (1984-12-01), Southerland, Jr.
patent: 4580247 (1986-04-01), Adam
patent: 5293337 (1994-03-01), Aritome et al.
patent: 5428568 (1995-06-01), Kobayashi et al.
patent: 5491809 (1996-02-01), Coffman et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5576993 (1996-11-01), Hong
patent: 5652719 (1997-07-01), Tanaka et al.
patent: 5768188 (1998-06-01), Park et al.
patent: 5808338 (1998-09-01), Gotou
patent: 5841721 (1998-11-01), Kwon et al.
patent: 5963477 (1999-10-01), Hung
patent: 5978270 (1999-11-01), Tanaka et al.
patent: 5995417 (1999-11-01), Chen et al.
patent: 6041001 (2000-03-01), Estakhri
patent: 6130841 (2000-10-01), Tanaka et al.
patent: 6166962 (2000-12-01), Chen et al.
patent: 6198662 (2001-03-01), Chen et al.
patent: 6222773 (2001-04-01), Tanzawa et al.
patent: 6249459 (2001-06-01), Chen et al.
patent: 6353556 (2002-03-01), Chen et al.
patent: 6381174 (2002-04-01), Roohparvar et al.
patent: 6421276 (2002-07-01), Goltman
patent: 6452840 (2002-09-01), Sunkavalli et al.
patent: 6483751 (2002-11-01), Chen et al.
patent: 6519184 (2003-02-01), Tanaka et al.
patent: 6525964 (2003-02-01), Tanaka et al.
patent: 6529413 (2003-03-01), Lee et al.
patent: 6618288 (2003-09-01), Akaogi et al.
patent: 6620682 (2003-09-01), Lee et al.
patent: 6643183 (2003-11-01), Atsumi et al.
patent: 6643184 (2003-11-01), Pio
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6646920 (2003-11-01), Takashina et al.
patent: 6661711 (2003-12-01), Pan et al.
patent: 6664587 (2003-12-01), Guterman et al.
patent: 6704222 (2004-03-01), Guterman et al.
patent: 6711066 (2004-03-01), Tanzawa et al.
patent: 6744670 (2004-06-01), Tamada et al.
patent: 6771541 (2004-08-01), Park
patent: 6842380 (2005-01-01), Lakhani et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6862223 (2005-03-01), Lee et al.
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 7009889 (2006-03-01), Tran et al.
patent: 7057936 (2006-06-01), Yaegashi et al.
patent: 7079437 (2006-07-01), Hazama et al.
patent: 7102929 (2006-09-01), Lee et al.
patent: 2002/0133679 (2002-09-01), Choi et al.
patent: 2003/0123296 (2003-07-01), Hirano
patent: 2003/0147278 (2003-08-01), Tanaka et al.
patent: 2003/0189864 (2003-10-01), Sim
patent: 2004/0141378 (2004-07-01), Tanzawa et al.
patent: 2005/0041515 (2005-02-01), Futatsuyama et al.
patent: 2005/0105373 (2005-05-01), Takase et al.
patent: 2005/0128805 (2005-06-01), Lee et al.
patent: 2006/0140012 (2006-06-01), Wan et al.
patent: 2006/0221660 (2006-10-01), Hemink et al.
patent: 2006/0221661 (2006-10-01), Hemink et al.
patent: 2006/0221703 (2006-10-01), Higashitani
patent: 2006/0221705 (2006-10-01), Hemink et al.
patent: 2006/0221708 (2006-10-01), Higashitani
patent: 2006/0221709 (2006-10-01), Hemink et al.
patent: 2006/0279992 (2006-12-01), Park et al.
patent: 2006/0285387 (2006-12-01), Micheloni et al.
patent: 2000024002 (2000-04-01), None
patent: 2004013864 (2004-02-01), None
Tetsuo Endoh, et al., A Study of High-Performance NAND Structured EEPROMS, IEICE Transactions on Electronics, Electronics Society, Tokyo, Japan, vol. E75-C, No. 11, Nov. 1, 1992, pp. 1351-1356.
Non-Final Office Action, United States Patent & Trademark Office, U.S. Appl. No. 11/025,620 filed on Dec. 29, 2004, Jul. 13, 2007.
International Preliminary Report on Patentability (Chapter 1 of the Patent Cooperation Treaty). Patent Cooperation Treaty, Application No. PCT/US2005/045557 filed on Dec. 15, 2005, Jul. 12, 2007.
Notice of Allowance and Fee(s) Due, United States Patent & Trademark Office, U.S. Appl. No. 11/025,620 entitled, “Word Line Compensation in Non-Volatile Memory Erase Operations,” Mar. 20, 2007.
Office Action, Non-Final, United States Patent & Trademark Office, U.S. Appl. No. 11/296,032 entitled, “Systems for Erasing Non-Volatile Memory Utilizing Changing Word Line Conditions to Compensate for Slower Erasing Memory Cells,” Feb. 28, 2007.
Office Action, Non-Final, United States Patent & Trademark Office, U.S. Appl. No. 11/296,028 entitled, “Systems for Erasing Non-Volatile Memory Individual Verification and Additional Erasing of Subsets of Memory Cells,” Mar. 12, 2007.
Office Action, Election/Restriction, United States Patent & Trademark Office, U.S. Appl. No. 11/296,032 entitled, “Systems for Erasing Non-Volatile Memory Utilizing Changing World Line Conditions to Compensate for Slower Erasing Memory Cells,” Nov. 8, 2006.
Office Action, Election/Restriction, United States Patent & Trademark Office, U.S. Appl. No. 11/296,028 entitled, “Systems for Erasing Non-Volatile Memory Using Individual Verification and Additional Erasing of Subsets of Memory Cells,” Dec. 6, 2006.
Office Action, Non-Final, United States Patent & Trademark Office, U.S. Appl. No. 11/025,620, entitled “Word Line Compensation in Non-Volatile Memory Erase Operations,” Mar. 31, 2006.
Supplemental Notice of Allowability, United States Patent & Trademark Office, U.S. Appl. No. 11/025,620 entitled, “Word Line Compensation in Non-Volatile Memory Erase Operations,” Mar. 26, 2007.
Notice of Allowance and Fee(s) Due, United States Patent & Trademark Office, U.S. Appl. No. 11/296,028 filed on Dec. 6, 2005, Aug. 6, 2007.
Supplemental Notice of Allowability, United States Patent & Trademark Office, U.S. Appl. No. 11/296,028 filed on Dec. 6, 2005, Sep. 4, 2007.
Allowed Claims, U.S. Appl. No. 11/296,028 filed on Dec. 6, 2005.
Non-Final Office Action, United States Patent & Trademark Office, U.S. Appl. No. 11/296,055 filed on Dec. 6, 2005, Oct. 2, 2007.
Notice of Allowance and Fee(s) Due, United States Patent & Trademark Office, U.S. Appl. No. 11/296,028 filed on Dec. 6, 2005, Nov. 21, 2007.
Response to Non-Final OA, U.S. Appl. No. 11/296,028 filed on Dec. 6, 2005, Jul. 12, 2007.
Response to Non-Final OA, U.S. Appl. No. 11/296,055 filed on Dec. 6, 2005, Jan. 2, 2008.
Hemink Gerrit Jan
Kamei Teruhiko
Nguyen Tuan T.
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
LandOfFree
Systems for soft programming non-volatile memory utilizing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems for soft programming non-volatile memory utilizing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems for soft programming non-volatile memory utilizing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4018793