Systems for reverse reading in non-volatile memory with...

Details Systems for reverse reading in non-volatile memory with... Systems for reverse reading in non-volatile memory with...

2006-09-29

2008-11-04

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185020, C365S185170, C365S185240

Reexamination Certificate

active

07447076

ABSTRACT:
Shifts in the apparent charge stored by a charge storage region such as a floating gate in a non-volatile memory cell can occur because of electrical field coupling based on charge stored in adjacent (or other) charge storage regions. Although not exclusively, the effects are most pronounced in situations where adjacent memory cells are programmed after a selected memory cell. To account for the shift in apparent charge, one or more compensations are applied when reading storage elements of a selected word line based on the charge stored by storage elements of other word lines. Efficient compensation techniques are provided by reverse reading blocks (or portions thereof) of memory cells. By reading in the opposite direction of programming, the information needed to apply (or select the results of) an appropriate compensation when reading a selected cell is determined during the actual read operation for the adjacent word line rather than dedicating a read operation to determine the information.

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U.S. Appl. No. 11/537,548, filed Sep. 29, 2006.
International Search Report and The Written Opinion of the International Searching Authority, Patent Cooperation Treaty, Application No. PCT/US2007/078950, Mar. 17, 2008.

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