Systems for programmable memory using silicided poly-silicon...

Details Systems for programmable memory using silicided poly-silicon... Systems for programmable memory using silicided poly-silicon...

2005-08-23

2005-08-23

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Read only systems

Fusible

C365S100000, C365S225700

Reexamination Certificate

active

06934176

ABSTRACT:
The present invention is directed to systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read current is applied to a first memory cell, thereby generating a memory cell voltage. The memory cell voltage is compared to the threshold voltage, thereby determining the state of the memory cell. In a further embodiment of the invention, a second threshold voltage is generated and compared the memory cell voltage, thereby verifying the state of the memory cell. The threshold current is optionally a substantial replica of said read current. The threshold current is optionally a proportional substantial replica of said read current. In an embodiment, the resistive circuit includes a second memory cell, which can be programmed or unprogrammed. The second memory cell is optionally arranged to average the memory cell resistance.

REFERENCES:
patent: 5572458 (1996-11-01), Smith et al.
patent: 5828604 (1998-10-01), Kawai et al.

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