Systems for performing chemical mechanical planarization and pro

Details Systems for performing chemical mechanical planarization and pro Systems for performing chemical mechanical planarization and pro

1995-03-30

1997-06-10

Dang, Thi

Semiconductor device manufacturing: process

Including control responsive to sensed condition

156345, 216 86, 216 89, 438693, B24B 100, B24B 3700

Patent

active

056371853

ABSTRACT:
A system for performing chemical mechanical planarization for a semiconductor wafer includes a chemical mechanical polishing system including a chemical mechanical polishing slurry. The system also includes a device for measuring the electrochemical potential of the slurry during processing which is electrically connected to the slurry, and a device for detecting the end point of the process, based upon the electrochemical potential of the slurry, which is responsive to the electrochemical potential measuring device. Accurate in situ control of a chemical mechanical polishing process is thereby provided.

REFERENCES:
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5217586 (1993-06-01), Datta et al.
patent: 5240552 (1993-08-01), Yu et al.
patent: 5242524 (1993-09-01), Leach et al.
patent: 5245794 (1993-09-01), Salugsugan
patent: 5308438 (1994-05-01), Cote et al.
patent: 5492594 (1996-02-01), Burke et al.
Steigerwald, et al.; Electrochemical Effects in the Chemical-Mechanical Polishing of Copper and Titanium Thin Films Used for Multilevel Interconnect Schemes; Jun. 1993 VMIC Conference, VMIC Catalog No. 931SMIC-102.

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