Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-01
2008-04-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185090, C360S053000, C369S030210
Reexamination Certificate
active
11322001
ABSTRACT:
Temporary lock-out is provided while programming a group of non-volatile memory cells to more accurately program the memory cells. After successfully verifying that the threshold voltage of a memory cell has reached the level for its intended state, it is possible that the threshold voltage will subsequently decrease to below the verify level during additional iterations of the programming process needed to complete programming of other memory cells of the group. Memory cells are monitored (e.g., after each iteration) to determine if they fall below the verify level after previously verifying that the target threshold voltage has been reached. Cells that pass verification and then subsequently fail verification can be subjected to further programming. For example, the bit line voltage for the memory cell of interest may be set to a moderately high voltage to slow down or reduce the amount of programming accomplished by each subsequent programming pulse. In this manner, a memory cell that falls out of verification can be placed back in the normal programming flow without risking over-programming of the cell.
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Phung Anh
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
Wendler Eric
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