Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-12-21
2008-11-11
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185330
Reexamination Certificate
active
07450435
ABSTRACT:
Systems and methods in accordance with various embodiments can provide for comprehensive erase verification and defect detection in non-volatile semiconductor memory. In one embodiment, the results of erasing a group of storage elements is verified using a plurality of test conditions to better detect defective and/or insufficiently erased storage elements of the group. For example, the results of erasing a NAND string can be verified by testing charging of the string in a plurality of directions with the storage elements biased to turn on if in an erased state. If a string of storage elements passes a first test process or operation but fails a second test process or operation, the string can be determined to have failed the erase process and possibly be defective. By testing charging or conduction of the string in a plurality of directions, defects in any transistors of the string that are masked under one set of conditions may be exposed under a second set of bias conditions. For example, a string may pass an erase verification operation but then be read as including one or more programmed storage elements. Such a string can be defective and mapped out of the memory device.
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Chen Jian
Lutze Jeffrey W.
Ponnuru Kiran
Tran Dat
Wan Jun
Nguyen Dang T
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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