Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-07-03
2009-10-06
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189070, C365S185170, C365S185200
Reexamination Certificate
active
07599224
ABSTRACT:
Coarse/fine programming of non-volatile memory is provided in which memory cells are programmed at a first rate of programming prior to reaching a coarse verify level for their intended state and a second rate of programming after reaching the coarse verify level but before reaching the final verify level for their intended state. Large sub-threshold swing factors associated with smaller memory cells can affect the accuracy of sense operations, particularly when sensing at a fine verify level after sensing at a coarse verify level without pre-charging the bit line between the different sensings. Different reference potentials are utilized when sensing at a coarse verify level and a final verify level. The different between the reference potentials can compensate for any discharge of the bit line during the coarse level sensing.
REFERENCES:
patent: 4357685 (1982-11-01), Daniele et al.
patent: 4627027 (1986-12-01), Rai et al.
patent: 5053990 (1991-10-01), Kreifels et al.
patent: 5122985 (1992-06-01), Santin
patent: 5220531 (1993-06-01), Blyth et al.
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5386422 (1995-01-01), Endoh et al.
patent: 5412601 (1995-05-01), Sawada et al.
patent: 5428568 (1995-06-01), Kobayashi et al.
patent: 5469444 (1995-11-01), Endoh et al.
patent: 5521865 (1996-05-01), Ohuchi et al.
patent: 5528546 (1996-06-01), Chao et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5596532 (1997-01-01), Cernea et al.
patent: 5623442 (1997-04-01), Gotou et al.
patent: 5652719 (1997-07-01), Tanaka et al.
patent: 5712180 (1998-01-01), Guterman et al.
patent: 5712815 (1998-01-01), Bill et al.
patent: 5729494 (1998-03-01), Gotou et al.
patent: 5761222 (1998-06-01), Baldi
patent: 5768191 (1998-06-01), Choi et al.
patent: 5808938 (1998-09-01), Tran et al.
patent: 5870334 (1999-02-01), Hemink et al.
patent: 5870344 (1999-02-01), Ozawa
patent: 5877984 (1999-03-01), Engh
patent: 5880993 (1999-03-01), Kramer et al.
patent: 5909393 (1999-06-01), Tran et al.
patent: 5912836 (1999-06-01), Liu et al.
patent: 5926409 (1999-07-01), Engh et al.
patent: 5943260 (1999-08-01), Hirakawa et al.
patent: 5949714 (1999-09-01), Hemink et al.
patent: 5969986 (1999-10-01), Wong et al.
patent: 5969990 (1999-10-01), Arase
patent: 5991202 (1999-11-01), Derhacobian et al.
patent: 6091637 (2000-07-01), Hakozaki
patent: 6125052 (2000-09-01), Tanaka
patent: 6128224 (2000-10-01), Morton et al.
patent: 6151248 (2000-11-01), Harari et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6243290 (2001-06-01), Kurata et al.
patent: 6266270 (2001-07-01), Nobukata
patent: 6278632 (2001-08-01), Chevallier
patent: 6278634 (2001-08-01), Ra
patent: 6292394 (2001-09-01), Cohen et al.
patent: 6301151 (2001-10-01), Engh et al.
patent: 6301161 (2001-10-01), Holzmann et al.
patent: 6317364 (2001-11-01), Guterman et al.
patent: 6343033 (2002-01-01), Parker
patent: 6344993 (2002-02-01), Harari et al.
patent: 6363010 (2002-03-01), Tanaka et al.
patent: 6392931 (2002-05-01), Pasotti et al.
patent: 6424566 (2002-07-01), Parker
patent: 6459620 (2002-10-01), Eshel
patent: 6504761 (2003-01-01), Kai et al.
patent: 6519184 (2003-02-01), Tanaka et al.
patent: 6522580 (2003-02-01), Chen et al.
patent: 6525964 (2003-02-01), Tanaka et al.
patent: 6529412 (2003-03-01), Chen et al.
patent: 6532172 (2003-03-01), Harari et al.
patent: 6590811 (2003-07-01), Hamilton et al.
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6674668 (2004-01-01), Ikehashi et al.
patent: 6735114 (2004-05-01), Hamilton et al.
patent: 6738289 (2004-05-01), Gongwer et al.
patent: 6747892 (2004-06-01), Khalid
patent: 6785164 (2004-08-01), Gonzalez et al.
patent: 6788579 (2004-09-01), Gregori et al.
patent: 6809962 (2004-10-01), Uribe et al.
patent: 6829167 (2004-12-01), Tu et al.
patent: 6853585 (2005-02-01), Lee et al.
patent: 6856551 (2005-02-01), Mokhlesi et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6888758 (2005-05-01), Hemink et al.
patent: 6894929 (2005-05-01), Matsuoka et al.
patent: 6924663 (2005-08-01), Masui et al.
patent: 6952365 (2005-10-01), Gonzalez et al.
patent: 6958934 (2005-10-01), Fan et al.
patent: 6967892 (2005-11-01), Tanaka et al.
patent: 7002843 (2006-02-01), Guterman et al.
patent: 7020026 (2006-03-01), Guterman et al.
patent: 7023733 (2006-04-01), Guterman et al.
patent: 7068539 (2006-06-01), Guterman et al.
patent: 7088621 (2006-08-01), Guterman et al.
patent: 7092290 (2006-08-01), Hemink
patent: 7139198 (2006-11-01), Guterman et al.
patent: 7173859 (2007-02-01), Hemink
patent: 7286406 (2007-10-01), Lutze et al.
patent: 7286414 (2007-10-01), Banks
patent: 7321509 (2008-01-01), Chen et al.
patent: 7443729 (2008-10-01), Li et al.
patent: 2001/0040824 (2001-11-01), Banks
patent: 2004/0057326 (2004-03-01), Ikehashi et al.
patent: 2004/0109352 (2004-06-01), Lee et al.
patent: 2004/0141377 (2004-07-01), Arai et al.
patent: 2005/0057965 (2005-03-01), Cernea et al.
patent: 2005/0057967 (2005-03-01), Khalid et al.
patent: 2005/0057968 (2005-03-01), Lutze et al.
patent: 2005/0083735 (2005-04-01), Chen et al.
patent: 2006/0221683 (2006-10-01), Chen et al.
patent: 2007/0140006 (2007-06-01), Chen et al.
patent: 0877386 (1998-11-01), None
patent: 1225596 (2002-07-01), None
patent: 1249842 (2002-10-01), None
patent: 1341185 (2003-09-01), None
patent: 9828745 (1998-07-01), None
patent: WO2006/107651 (2006-10-01), None
Non-Final Office Action, United States Patent & Trademark Office, U.S. Appl. No. 11/773,032 filed Jul. 3, 2007, Aug. 4, 2008.
Kurata, Hideaki, et al., “Constant-Charge-Injection Programming for 10MB/s Multilevel AG-AND Flash Memories,” 2002 Symposium On VLSI Circuits Digest of Technical Papers, pp. 302-303.
Johnson, William S., et al., “Session XII: ROMs, PROMs and EFROMs,” 1980 IEEE International Solid-State Circuits Conference, pp. 152-153.
Nobukata, Hiromi, et al., “A 144-Mb 8 Level NAND Flash Memory with Optimized Pulse Width Programming,” 1999 Symposium on VLSI Circuits Digest of Technical Papers, pp. 39-40.
Ohkawa, Masayoshi, et al., “TP 2.3: A 98mm2 3.3V 64Mb Flash Memory with FN-NOR Type 4-level Cell,” 1996 IEEE International Solid-State Circuits Conference, pp. 36-37.
Takeuchi, et al., “A Source-line Programming Scheme for Low Voltage Operation NAND Flash Memories,” 1999 Symposium on VLSI Circuits Digest of Technical Papers, pp. 37-38.
Hosono, et al., “A High Speed Failure Bit Counted for the Pseudo Pass Scheme (PPS) in Program Operation for Giga Bit NAND Flash,” Toshiba Corporation, pp. 23-26.
Choi, et al., “A Novel Booster Plate Technology in High Density NAND Flash Memories for voltage Scaling-down and Zero Program Disturbance,” Samsung Electronics Co., Ltd., pp. 238-239.
U.S. Appl. No. 11/773,032 filed on Jul. 3, 2007.
International Search Report & The Written Opinion of the International Searching Authority, Patent Cooperation Treaty, Application No. PCT/US2008/068988 filed on Jul. 2, 2008, Oct. 13, 2008.
Supplemental Amendment, U.S. Appl. No. 11/773,032 filed on Jul. 3, 2007, Oct. 28, 2008.
Notice of Allowance and Fee(s) Due, United States Patent & Trademark Office, U.S. Appl. No. 11/773,032 filed Jul. 3, 2007, Nov. 6, 2008.
Response to Non-Final Office Action, U.S. Appl. No. 11/773,032 filed Jul. 3, 2007, Sep. 25, 2008.
Nguyen Tuan T.
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
LandOfFree
Systems for coarse/fine program verification in non-volatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems for coarse/fine program verification in non-volatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems for coarse/fine program verification in non-volatile... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4119601