Systems and methods to determine seed layer thickness of...

Active solid-state devices (e.g. – transistors – solid-state diode – Miscellaneous

Reexamination Certificate

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C257S301000, C257S762000

Reexamination Certificate

active

06879051

ABSTRACT:
One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.

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Schalke, Manfred, et al. “Submolecular organization of DMPA in surface monolayers: beyond the two-layer model.” Biochimica et Biophysica Acta 1464 (2000) pp. 113-126.
Filies, O,, et al. “Analysis of Thin Films by X Ray Reflectometry,” IKP Munster, AG. Cleff 1995, 1996. http://pikp15.uni-muenster.de/ikpxrr/berichte/xrayjahr.htm.

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