Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-07-11
2006-07-11
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C327S518000, C324S765010, C257S685000
Reexamination Certificate
active
07075175
ABSTRACT:
A main die and a stacked die are included in the same component package. A transmission gate (370) is implemented on the main die, and can be enabled to receive leakage current in a connection (318) between the main die and the stacked die, and to conduct the leakage current to a bonding pad (344) that is accessible external to the package. Thus, the connectivity between the main die and the stacked die can be tested after the dies are packaged. The transmission gate is disabled during high-speed testing and normal operation. The package can also include a multiplexer (364) that is enabled during high-speed testing to input and output test signals at the package level. A direction signal is used to indicate whether test signals are being input to or output from the main die.
REFERENCES:
patent: 6205082 (2001-03-01), Tomita et al.
patent: 6496030 (2002-12-01), Kaneko
patent: 6724237 (2004-04-01), Yamashita et al.
patent: 6794914 (2004-09-01), Sani et al.
patent: 0838760 (1998-04-01), None
patent: 0029860 (2000-05-01), None
Gemar Jeff
Kazi Tauseef
Mohan Vivek
Srinivas Vaishnav
Brown Charles D.
Kordich Donald C.
Qualcomm Incorporated
Tran Mai-Huong
Wadsworth Philip
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