Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2006-11-17
2010-02-23
Le, Thao (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S605000, C257S409000, C257S452000, C257S484000, C438S624000
Reexamination Certificate
active
07667242
ABSTRACT:
Systems and methods for maximizing the breakdown voltage of a semiconductor device are described. In a multiple floating guard ring design, the spacing between two consecutive sets of floating guard rings may increase with their distance from the main junction while maintaining depletion region overlap, thereby alleviating crowding and optimally spreading the electric field leading to a breakdown voltage that is close to the intrinsic material limit. In another exemplary embodiment, fabrication of floating guard rings simultaneously with the formation of another semiconductor feature allows precise positioning of the first floating guard ring with respect to the edge of a main junction, as well as precise control of floating guard ring widths and spacings. In yet another exemplary embodiment, design of the vertical separation between doped regions of a semiconductor device adjusts the device's gate-to-source breakdown voltage without affecting the device's pinch-off voltage.
REFERENCES:
patent: 4974055 (1990-11-01), Haskell
patent: 5324673 (1994-06-01), Fitch et al.
patent: 5736457 (1998-04-01), Zhao
patent: 6294460 (2001-09-01), Subramanian et al.
patent: 6756319 (2004-06-01), Kim et al.
patent: 6998204 (2006-02-01), Furukawa et al.
Chen Li-Shu
McCoy Megan Jean
McNutt Ty Richard
Stewart Eric Jonathan
Veliadis John V.
Fulbright & Jaworski L.L.P.
Le Thao
Northrop Grumman Systems Corporation
LandOfFree
Systems and methods for maximizing breakdown voltage in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems and methods for maximizing breakdown voltage in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for maximizing breakdown voltage in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4154501