Systems and methods for light absorption and field emission...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C136S256000, C136S261000

Reexamination Certificate

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07390689

ABSTRACT:
Methods and systems for absorbing infrared light, and for emitting current are described. A sample, such as a sample containing mainly silicon, is microstructured by at least one laser pulse to produce cone-like structures on the exposed surface. Such microstructuring enhances the infrared absorbing, and current emission properties of the sample.

REFERENCES:
patent: 4201450 (1980-05-01), Trapani
patent: 4277793 (1981-07-01), Webb
patent: 4965784 (1990-10-01), Land et al.
patent: 5773820 (1998-06-01), Osajda et al.
Hu et al, Solar Cells from Basic to Advanced Systems, McGraw-Hill Book Company, NY, 1983, p. 39.
“Basic Photovoltaic Principles and Methods,” Solar Energy Research Institute, Van Nostrand Reinhold Company, NY, 1984, pp. 45-47 and 138-142.
Her et al, “Microstructuring of silicon with femtosecond laser pulses,” Applied Physics Letters, vol. 73, No. 12, Sep. 21, 1998.
Wu et al, “Black silicon a new light absorber,” APS Centennial Meeting, Mar. 23, 1999.
Wu et al, “Femtosecond laser-gas-solid interactions,” Thesis presented to the Deparatment of Physics at Harvard University, pp. 1-113, 126-136, Aug. 2000.
Wu et al, “Near-unity below-band-gap absorption by microstructured silicon,” Applied Physics Letters, vol. 78, No. 13, Mar. 20, 2001.
Younkin et al, “Infrared absorption by conical silicon microstructures made in a a variety of background gases using femtosecond-laser pulses,” Proc. CLEO 2001 (Baltimore, MD, 2001), pp. 556, May 11, 2001.
Carey, J.E. et al. “Field Emission from Silicon Microstructures Formed by Femtosecond Laser Assisted Etching,”Proc. CLEO2001 (Baltimore, MD, 2001) 555-557.
Carey, J.E. et al. “Fabrication of Micrometer-Sized Conical Field Emitters Using Femto-second Laser-Assisted Etching of Silicon,”Proc. IVMC2001 (Davis, CA, 2001) 75-76.
Her, T.-H. et al. “Microstructuring of silicon with femtosecond laser pulses,”Appl. Phys. Lett.73, 1673-1675 (1998).
Her, T.-H. et al. “Femtosecond laser-induced formation of spikes on silicon,”Applied Physics A70, 383-385 (2000).
Wu, C. et al. “Black silicon a new light absorber,”APS Centennial meeting(Mar. 23, 1999).
Wu, C. “Femtosecond laser-gas-solid interactions,” Thesis presented to the Department of Physics at Harvard University pp. 1-113, 126-136(Aug. 2000).
Wu, C. et al. “Near-unity below-band gap absorption by microstructured silicon,”Appl. Phys. Lett.78, 1850-1852 (2001).
Younkin, R. et al. “Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses,”Proc. CLEO2001 (Baltimore, MD, 2001) p. 556.
Younkin, R.A. “Surface studies and microstructure fabrication using femtosecond laser pulses,” Thesis presented to the Division of Engineering & Applied sciences at Harvard University (Aug. 2001).
Dolgaev et al., “Formation Of Conical Microstructures Upon Laser Evaporation Of Solids”,Appl. Phys. A, 73, 177-181 (2001).
Her et al., “Novel Conical Microstructures Created In Silicon With Femtosecond Laser Pulses”, CLEO 1998 (San Francisco, CA 1998) 511-512.
Pedraza et al., “Silicon Microcolumn Arrays Grown By Nanosecond Pulsed-Excimer Laser Irradiation”,Appl. Phys. Lett., 74 (16), 2322-2324 (1999).
Sanchez et al., “Dynamics Of The Hydrodynamical Growth Of Columns On Silicon Exposed To ArF Excimer-Laser Irradiation”,Appl. Phys. A, 66, 83-86 (1998).
Sanchez et al., “Whiskerlike Structure Growth On Silicon Exposed To ArF Excimer Laser Irradiation”,Appl. Phys. Lett., 69 (5), 620-622 (1996).

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