Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-03-28
2006-03-28
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S290000, C250S293000, C250S295000, C250S297000, C250S298000
Reexamination Certificate
active
07019314
ABSTRACT:
Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
REFERENCES:
patent: 4687936 (1987-08-01), McIntyre et al.
patent: 4914305 (1990-04-01), Benveniste et al.
patent: 5373164 (1994-12-01), Benveniste
patent: 5736743 (1998-04-01), Benveniste
patent: 5780863 (1998-07-01), Benveniste et al.
patent: 5900667 (1999-05-01), Veneklasen et al.
patent: 6207963 (2001-03-01), Benveniste
patent: 6403967 (2002-06-01), Chen et al.
patent: 6768117 (2004-07-01), Veneklasen et al.
patent: 6774377 (2004-08-01), Rathmell et al.
patent: 6903350 (2005-06-01), Vanderberg et al.
patent: 6924494 (2005-08-01), Veneklasen et al.
patent: 2004/0217304 (2004-11-01), Veneklasen et al.
Benveniste Victor M.
Kellerman Peter L.
Axcelis Technologies Inc.
Eschweilier & Associates, LLC
Souw Bernard E.
Wells Nikita
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