Optics: measuring and testing – Dimension – Thickness
Reexamination Certificate
2007-05-08
2007-05-08
Punnoose, Roy M. (Department: 2877)
Optics: measuring and testing
Dimension
Thickness
C356S635000, C356S124000
Reexamination Certificate
active
10794094
ABSTRACT:
Fluid immersion technology can be utilized to increase the resolution and angular range of existing metrology systems. An immersion fluid placed between the metrology optics and the sample can reduce the refraction at the sample interface, thereby decreasing the spot size of the beam on a feature of the sample while simultaneously increasing the angular range of the system. The decreased spot size, in combination with an increased angular spread, allows an existing metrology system to measure parameters of a sample, such as a semiconductor or microelectronic device, with improved resolution and without expensive and/or complex changes to the mechanics of the metrology system.
REFERENCES:
patent: 4999014 (1991-03-01), Gold et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5121256 (1992-06-01), Corle et al.
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5412473 (1995-05-01), Rosencwaig et al.
patent: 5596411 (1997-01-01), Fanton et al.
patent: 5610683 (1997-03-01), Takahashi
patent: 5798837 (1998-08-01), Aspnes et al.
patent: 5877859 (1999-03-01), Aspnes et al.
patent: 5900354 (1999-05-01), Batchelder
patent: 5953446 (1999-09-01), Opsal et al.
patent: 6411434 (2002-06-01), Eastman et al.
patent: 6429943 (2002-08-01), Opsal et al.
patent: 2003/0147086 (2003-08-01), Rosencwaig et al.
patent: 2003/0174408 (2003-09-01), Rostalski et al.
patent: 2003/0227623 (2003-12-01), Zhan et al.
patent: 2004/0240047 (2004-12-01), Shafer et al.
patent: 2004/0263959 (2004-12-01), Dixon et al.
patent: WO 99/02970 (1999-01-01), None
J.M. Leng et al., “Simultaneous measurement of six layers in a silicon on insulator film stack using spectrophotometry and beam profile reflectometry,”J. Appl. Phys., vol. 81, No. 8, Apr. 15, 1997, pp. 3570-3578.
B.W. Smith, “Immersion Optical Lithography at 193nm,”Future Fan Intl., vol. 15, Jul. 11, 2003, 11 pages in length.
H. Hogan, “New Semiconductor Lithography Makes a Splash,”Photonics TechnologyWorld(http://www.photonics.com/spectra/tech/XQ/ASP/techid.1589/placement.HomeIndex/QXR/r...) Oct. 2003 Edition, 3 pages in length.
“Technology backgrounder: Immersion Lithography,” copyright 2003 IC Knowledge, from ICKnowledge.com, pp. 1-5.
D. Lammers, “Scanners take the plunge,”EETimes(http://eet.com/issue/fp/OEG2004020S0014), Feb. 2, 2004, 5 pages in length.
D. Lammers, “Immersion could extend to 22-nm node,”EETimes(http://www.etimes.com/printableArticle?doc—id=OEG20040127S0023), Jan. 27, 2004, 2 pages in length.
J.T. Fanton et al., “Multiparameter measurements of thin films using beam-profile reflectometry,”J. Appl. Phys., vol. 73, No. 11, Jun. 1, 1993, pp. 7035-7040.
X. Niu et al., “Specular Spectroscopic Scatterometry in DUV Lithography,”SPIE(part of the SPIE Conference on Metrology, Inspection, and Process Control of Microlithography XIII, Santa Clara, California), vol. 3677, Mar. 1999, pp. 159-168.
N. Jakatdar et al., “In-situMetrology for Deep Ultraviolet Lithography Process Control,”SPIE, vol. 3332 (1998), pp. 262-270.
Punnoose Roy M.
Stallman & Pollock LLP
Therma-Wave, Inc.
LandOfFree
Systems and methods for immersion metrology does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Systems and methods for immersion metrology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Systems and methods for immersion metrology will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3794849