Systems and methods for forming tantalum oxide layers and...

Details Systems and methods for forming tantalum oxide layers and... Systems and methods for forming tantalum oxide layers and...

2008-04-21

2010-12-28

Gonzalez, Porfirio Nazario (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C438S785000

Reexamination Certificate

active

07858815

ABSTRACT:
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

REFERENCES:
patent: 4525468 (1985-06-01), Mack et al.
patent: 5256244 (1993-10-01), Ackerman
patent: 5401305 (1995-03-01), Russo et al.
patent: 5462014 (1995-10-01), Awaya et al.
patent: 5468687 (1995-11-01), Carl et al.
patent: 5480488 (1996-01-01), Bittner et al.
patent: 5487918 (1996-01-01), Akhtar
patent: 5599387 (1997-02-01), Neuman et al.
patent: 5780115 (1998-07-01), Park et al.
patent: 5820664 (1998-10-01), Gardiner et al.
patent: 5820994 (1998-10-01), Gotoh et al.
patent: 5863337 (1999-01-01), Neuman et al.
patent: 5948322 (1999-09-01), Baum et al.
patent: 5989623 (1999-11-01), Chen et al.
patent: 6037001 (2000-03-01), Kaloyeros et al.
patent: 6118146 (2000-09-01), Park et al.
patent: 6133086 (2000-10-01), Huang et al.
patent: 6146959 (2000-11-01), DeBoer et al.
patent: 6200658 (2001-03-01), Walther et al.
patent: 6200847 (2001-03-01), Kishiro
patent: 6207302 (2001-03-01), Sugiura et al.
patent: 6265260 (2001-07-01), Alers et al.
patent: 6328947 (2001-12-01), Monden et al.
patent: 6448187 (2002-09-01), Yau et al.
patent: 6461982 (2002-10-01), DeBoer et al.
patent: 6482477 (2002-11-01), Westhoff et al.
patent: 6487918 (2002-12-01), DeAngelis
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6596602 (2003-07-01), Iizuka et al.
patent: 6784049 (2004-08-01), Vaartstra
patent: 6919243 (2005-07-01), Chung et al.
patent: 6932867 (2005-08-01), Ritala et al.
patent: 6939579 (2005-09-01), Bondestam et al.
patent: 6998014 (2006-02-01), Chen et al.
patent: 7030042 (2006-04-01), Vaartstra et al.
patent: 7368402 (2008-05-01), Vaartstra et al.
patent: 2001/0036752 (2001-11-01), DeBoer et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0094634 (2002-07-01), Chung et al.
patent: 2002/0102810 (2002-08-01), Iizuka et al.
patent: 2002/0157611 (2002-10-01), Bondestam et al.
patent: 2003/0143328 (2003-07-01), Chen et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2004/0018735 (2004-01-01), Park et al.
patent: 2004/0043633 (2004-03-01), Vaartstra
patent: 2005/0009266 (2005-01-01), Vaartstra
patent: 2006/0178019 (2006-08-01), Senzaki et al.
patent: 1205574 (2002-05-01), None
patent: 2001-181288 (1999-12-01), None
patent: WO 95/26355 (1995-10-01), None
patent: WO 01/40541 (2001-06-01), None
Chaneliere et al., “Dielectric Permittivity of Amorphous and Hexagonal Electron Cyclotron Resonance Plasma Deposited Ta2O5Thin Films,”Electrochemical and Solid-State Letters, Jun. 1999; 2(6):291-3.
Grant&Hackh's Chemical Dictionary, McGraw-Hill Book Company, 5thedition, 1987:221.
Hawley,The Condensed Chemical Dictionary, 10thEdition, Van Nostrand Reinhold Co., New York, 1981; 225-226.
Jiménez et al., “Deposition of Ta2O5and (Tio2)-(Ta2O5) films from Ta(OEt)4(DMAE) and Ti(OEt)2(DMAE)2, by IMOCVD,”J. Phys. IV France, 1999; 9:Pr8-569-Pr8-573.
Kishiro et al., “Structure and Electrical Properties of Thin Ta2O5Deposited on Metal Electrodes,”Jpn. J. Appl. Phys., Mar. 1998; 37(3B):1336-9.
Lin et al., “Ta2O5thin films with exceptionally high dielectric constant,”Applied Physics Letter, Apr. 1999; 74(16):2370-2.
“Material Safety Data Sheet- Catalog # 235733, Name: 1,1,3,3-Tetramethyldisiloxane, 97%”Aldrich Chemical Co., Inc. [online]. [retrieved Jun. 23, 2003]. Retrieved from the internet<http://infonew.sigma-aldrich.com/cgi-bin/gx.cgi/Applogic+MSDSInfo.ReturnMSDS>;3 pgs. Valid May-Jul. 2003.
“Material Safety Data Sheet- Catalog # 326739, Name: Hexamethyldisiloxane, 99.5+%, NMR Grade,”Aldrich Chemical Co., Inc. [online]. [retrieved Jun. 23, 2003]. Retrieved from the internet: <http://infonew.sigma-aldrich.com/cgi-bin/gx.cgi/Applogic+MSDSInfo.ReturnMSDS>;3 pgs. Valid May-Jul. 2003.
“Refractory” and “Refractory metal,”Webster's New Universal Unabridged Dictionary, Avenel, New Jersey, 1992; p. 1207.
Vehkamäki et al., “Growth of SrTiO3and BaTiO3Thin Films by Atomic Layer Deposition,”Electrochemical and Solid-State Letters, Oct. 1999; 2(10):504-506.

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