Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-10-18
2009-12-01
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S259000, C257S532000, C333S206000, C333S219100
Reexamination Certificate
active
07626216
ABSTRACT:
A hybrid electromagnetic bandgap (EBG) structure for broadband suppression of noise on printed wiring boards includes an array of coplanar patches interconnected into a grid by series inductances, and a corresponding array of shunt LC networks connecting the coplanar patches to a second conductive plane. This combination of series inductances and shunt resonant vias lowers the cutoff frequency for the fundamental stopband. The series inductances and shunt capacitances may be implemented using surface mount component technology, or printed traces. Patches may also be interconnected by coplanar coupled transmission lines. The even and odd mode impedances of the coupled lines may be increased by forming slots in the second conductive plane disposed opposite to the transmission line, lowering the cutoff frequency and increasing the bandwidth of the fundamental stopband. Coplanar EBG structures may be integrated into power distribution networks of printed wiring boards for broadband suppression of electromagnetic noise.
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Brinks Hofer Gilson & Lione
Dang Phuc T
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