Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With doping profile to adjust barrier height
Reexamination Certificate
2004-12-20
2009-08-04
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With doping profile to adjust barrier height
C257SE23021, C977S762000
Reexamination Certificate
active
07569905
ABSTRACT:
Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.
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Co-pending U.S. Appl. No. 11/015,665.
Co-pending U.S. Appl. No. 11/015,469.
Hantschel Thomas
Johnson Noble M.
Kiesel Peter
Van De Walle Christian G.
Wong William S.
Dickey Thomas L
Erdem Fazli
Oliff & Berridg,e PLC
Palo Alto Research Center Incorporated
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