Systems and methods for bonding materials using microwave...

Details Systems and methods for bonding materials using microwave... Systems and methods for bonding materials using microwave...

2011-07-26

2011-07-26

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE21567, C257SE21122

Reexamination Certificate

active

07985657

ABSTRACT:
Systems and methods are disclosed for bonding of semiconductor, metal, metal-ceramic or combinations of these substrates using microwave energy. In some embodiments, metal-ceramic substrates carrying semiconductor substrates can be bonded simultaneously through a thin interlayer metal to a metal substrate by using microwave energy. In some embodiments, other substrate combinations can be bonded by using microwave energy. High intensity microwave energy is applied to the substrate assembly positioned within a microwave cavity. A process of selective heating can occur in the thin interlayer metal enhanced by the presence of third microwave absorbing substrate, resulting in melting of the thin interlayer metal to facilitate bonding of the two substrates. Some of the advantages associated with such bonding process are disclosed.

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