Systems and methods for biasing high fill-factor sensor...

Details Systems and methods for biasing high fill-factor sensor... Systems and methods for biasing high fill-factor sensor...

2011-01-04

2011-01-04

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S292000, C257S430000, C257S444000, C257S656000, C257SE29336, C257SE31061

Reexamination Certificate

active

07863703

ABSTRACT:
A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.

REFERENCES:
patent: 6730914 (2004-05-01), Chao et al.
patent: 7382034 (2008-06-01), Rieve et al.
patent: WO 02/093653 (2002-11-01), None
patent: WO 02093653 (2002-11-01), None

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