Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-03-06
1998-10-27
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257214, 257225, 257290, 257369, 257458, 257462, 257618, H01L 3100, H01L 2906
Patent
active
058281185
ABSTRACT:
An electromagnetic energy detector system down converts electromagnetic egy from a relatively high energy beyond the detectable range of an electromagnetic energy detector to a lower energy level within the detectable range of the electromagnetic energy detector. The detector includes a transparent substrate, a porous silicon structure formed on the substrate for down converting electromagnetic energy characterized by a first wavelength W1 to electromagnetic energy characterized by a second wavelength W2, where W2>W1; and an electromagnetic energy detector for detecting the down converted electromagnetic energy. The detector is useful in applications where the electromagnetic energy detector would ordinarily be incapable of detecting the higher level electromagnetic energy directly without going through the down conversion process effectuated by the porous silicon structure.
REFERENCES:
patent: 5569932 (1996-10-01), Shor et al.
patent: 5696629 (1997-12-01), Berger et al.
Fendelman Harvey
Kagan Michael A.
Lipovsky Peter A.
Ngo Ngan V.
The United States of America as represented by the Secretary of
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