System that facilitates reading multi-level data in...

Coded data generation or conversion – Analog to or from digital conversion – Analog to digital conversion

Reexamination Certificate

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C341S131000

Reexamination Certificate

active

07068204

ABSTRACT:
The present invention pertains to a system that facilitates a determination of the level of a bit in a dual sided ONO flash memory cell where each of the bits of the dual sided ONO flash memory cell can be programmed to multiple levels. One or more aspects of the present invention take into consideration the affect that the level of charge on one bit can have on the other bit, otherwise known as complimentary bit disturb. A metric known as transconductance is utilized in making the bit level determination to provide a greater degree of resolution and accuracy. In this manner, determining the bit level in accordance with one or more aspects of the present invention mitigates false or erroneous reads.

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