Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2008-09-08
2009-11-10
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185140, C365S185280
Reexamination Certificate
active
07616480
ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
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Fong Yupin
Li Yan
Lappas Jason
Zarabian Amir
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