Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-07-20
2008-10-28
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185020, C365S185260, C365S183000
Reexamination Certificate
active
07443729
ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
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Fong Yupin
Li Yan
Ho Hoai V.
Lappas Jason
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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