System, method, and apparatus for ion beam etching process...

Details System, method, and apparatus for ion beam etching process... System, method, and apparatus for ion beam etching process...

2006-07-11

2006-07-11

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492210, C250S492300, C438S473000

Reexamination Certificate

active

07075094

ABSTRACT:
A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.

REFERENCES:
patent: 4874947 (1989-10-01), Ward et al.
patent: 6268608 (2001-07-01), Chandler
patent: 2006/0022148 (2006-02-01), Fischione et al.

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