System having electrostatic discharge protection structure...

Details System having electrostatic discharge protection structure... System having electrostatic discharge protection structure...

2006-11-20

2008-11-25

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257SE27111

Reexamination Certificate

active

07456432

ABSTRACT:
A system having an electrostatic discharge protection structure and a method for manufacturing the structure are provided. The structure comprises a conducting layer, a material layer and a bridging layer wherein the conducting layer is divided into a first conducting portion and a second conducting portion to form a gap therebetween. The material layer is disposed onto the conducting layer, forming a first via hole to expose a part of the first conducting portion and a second via hole to expose a part of the second conducting portion. Finally, the bridging layer disposed onto the material layer electrically connects the first conducting portion to the second conducting portion within the first and second via holes, whereby the electrostatic produced during the manufacturing process would be prevented from damaging the driver circuits.

REFERENCES:
patent: 5532853 (1996-07-01), Song et al.
patent: 2003/0052616 (2003-03-01), Antoniadis et al.

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