System for the preferential removal of silicon oxide

Details System for the preferential removal of silicon oxide System for the preferential removal of silicon oxide

2008-04-29

2008-04-29

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000

Reexamination Certificate

active

07365013

ABSTRACT:
A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

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