System for specifying critical dimensions, sequence numbers and

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, 430311, 430394, 430396, 356401, G03F 900

Patent

active

044421885

ABSTRACT:
A system for specifying critical dimensions, mask sequence levels, and mask revision levels on integrated circuit photomasks and chips involving use of a patterned array of geometric regions containing preselected indicia in each region corresponding to the mask sequence number for an associated photomask. The preselected indicia may be either a critical diemension pattern to integrate the mask sequence indicia with the critical dimension specification or a mask revision level code to integrate the mask sequence number with the revision level, or a combination of both a critical dimension pattern and a mask revision level code. In the latter case the mask revision level code is integrated with the critical dimension pattern to conserve space on the photomask and the IC chip.

REFERENCES:
patent: 3690881 (1972-09-01), King

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