Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Electrical signal parameter measurement system
Reexamination Certificate
2007-04-03
2007-04-03
Hoff, Marc S. (Department: 2857)
Data processing: measuring, calibrating, or testing
Measurement system in a specific environment
Electrical signal parameter measurement system
C702S081000, C702S128000, C438S014000, C438S017000, C438S104000, C438S935000, C324S071100, C324S071500, C324S1540PB
Reexamination Certificate
active
10853867
ABSTRACT:
The present invention defines a system (100) for detecting copper contamination within a semiconductor manufacturing process. According to the present invention, a semiconductor wafer (102) is transferred (108) from a semiconductor manufacturing component (104), which may have exposed the wafer to copper contamination, to a measurement system (106). The measurement system measures an electrical value at a plurality of locations along a surface of the wafer, prior to and after exposure of the surface to an activation system (112). The activation system is provided to cause any copper contamination along the surface to form a precipitate thereon. An analysis component (110) is provided to receive electrical value and location information from the measurement system and to identify, from the measurements, the presence and location of copper contamination along the semiconductor wafer surface.
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Yli-Koski et al., ‘Detection of Low-Level Copper contamination in P-type silicon by means of microwave photoconductive decay measurements’, 2002, IOP Publication, pp. 13119-13125.
Brady III W. James
Desta Elias
Hoff Marc S.
McLarty Peter K.
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