Metal working – Barrier layer or semiconductor device making
Reexamination Certificate
2007-02-27
2007-02-27
Toledo, Fernando L. (Department: 2823)
Metal working
Barrier layer or semiconductor device making
C228S042000
Reexamination Certificate
active
10764162
ABSTRACT:
The invention provides a system for reducing oxidation of a semiconductor device when it is heated, for example during wire bonding. A holding device is provided for securing the semiconductor device to a platform. The holding device includes an opening for providing access to an area where the semiconductor device is to be heated and a cavity is coupled to the opening. A gas inlet in fluid communication with the cavity supplies a relatively inert gas to the cavity, whereby to transmit the inert gas to the opening through the cavity and to reduce oxidation of the semiconductor device.
REFERENCES:
patent: 5265788 (1993-11-01), Ozawa et al.
patent: 5364007 (1994-11-01), Jacobs et al.
patent: 5569075 (1996-10-01), Leturmy
patent: 6866182 (2005-03-01), Wong et al.
Duan Rong
Kwan Ka Shing Kenny
ASM Technology Singapore Pty Ltd.
Ostrolenk Faber Gerb & Soffen, LLP
Toledo Fernando L.
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