System for preventing decomposition of silicon carbide articles

Details System for preventing decomposition of silicon carbide articles System for preventing decomposition of silicon carbide articles

1985-04-01

1987-03-10

Lechert, Jr., Stephen J.

Plastic and nonmetallic article shaping or treating: processes

Pore forming in situ

By mechanically introducing gas into material

75236, 264 65, 264332, 373 18, 419 17, 419 45, 419 57, 423345, 501 88, F27B 904

Patent

active

046490027

ABSTRACT:
A system to prevent, retard or reverse the decomposition of silicon carbide articles during high temperature plasma sintering. Preferably, the system comprises sintering a silicon carbide refractory or ceramic green body in a closed sintering environment, such as a covered crucible, with strategic placement of the plasma torch or torches, exhaust outlet and crucibles. As sintering proceeds, a silicon vapor pressure builds up within the crucible, retarding the decomposition of the silicon carbide body. The plasma torch, exhaust outlet, and crucibles are positioned so that buoyant convective flow is maximized to increase the heat transfer and energy efficiency. In another embodiment, a "sacrificial" source of silicon carbide is placed into the sintering furnace. The silicon carbide in the sacrificial source starts to decompose before the silicon carbide refractory or ceramic article, creating a supersaturated atmosphere of silicon vapor species in the furnace. This prevents, retards or reverses the silicon carbide decomposition reactions and thus maintains the integrity of the refractory or ceramic article being sintered. Preferably, the sacrificial source is placed in a closed sintering environment along with the silicon carbide article being sintered.

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patent: 3977837 (1976-08-01), Mal
patent: 4141726 (1979-02-01), Yajima et al.
patent: 4179299 (1979-12-01), Coppola et al.
patent: 4381931 (1983-05-01), Hunold et al.
patent: 4501717 (1985-02-01), Tsukamoto et al.

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