Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-03-11
2008-03-11
Pham, Lý Duy (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185210, C365S185230, C365S211000
Reexamination Certificate
active
11424812
ABSTRACT:
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position.
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Mokhlesi Nima
Zhao Dengtao
Pham Lý Duy
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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