Chemistry: electrical and wave energy – Processes and products
Patent
1980-06-16
1983-08-09
Larkins, William D.
Chemistry: electrical and wave energy
Processes and products
204 84, 204406, 357 25, 357 23, G01N 2726
Patent
active
043977146
ABSTRACT:
A solid state chemically sensitive integrated circuit includes three field-effect transistors (FETs) fabricated on a single semiconductor substrate. The gate of a first FET is overlaid with a chemically sensitive element that is adapted to create an electrochemical potential at the gate when exposed to selected chemical substances. This gate is also electrically connected to the source of a second FET and the drain of a third FET. The second and third FETs are used as switches to selectively connect the gate of the first FET to ground, to an external reference potential, or to isolate it from all external signals. In the latter case, only the interaction between the chemically sensitive element and external chemical substances may affect the first FET's operation thus allowing the first FET, when so isolated, to provide a measure of the chemical properties of the substance to which its chemically sensitive element is exposed. The presence of the second and third FETs allows the first FET to be protected from static shock during routine handling and when the device is not in use. They also allow the performance of the first FET to be fully characterized by permitting a controlled gate voltage to be applied to the first FET.
REFERENCES:
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4180771 (1979-12-01), Guckel
patent: 4218298 (1980-08-01), Shimada et al.
patent: 4238757 (1980-12-01), Schenck
Barthold, IBM Tech. Discl. Bulletin, vol. 19, No. 4, Sep. 1976, p. 1292.
Huber Robert J.
Janata Jiri
Smith Rosemary L.
Larkins William D.
University of Utah
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