System for measuring slip dislocations and film stress in semico

Details System for measuring slip dislocations and film stress in semico System for measuring slip dislocations and film stress in semico

1993-09-08

1996-04-09

Turner, Samuel A.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356360, G01L 124, G01B 1100

Patent

active

055066720

ABSTRACT:
A system (22) is provided for measuring warpage, film stress, and slip dislocations in a semiconductor wafer (10), which includes a laser source (24) for generating a primary laser beam. At least one beam splitter (26) splits the primary laser beam into at least first and second beams, the first beam is directed to a first point of wafer surface, and the second beam is directed to a second point of the wafer surface. The at least one beam splitter (26) is further operable to combine a portion of the first beam after reflection from the first point of wafer surface and a portion of the second beam after reflection from the second point of the wafer surface into at least one composite beam for interferometric beam fringe pattern analysis.

REFERENCES:
patent: 4298283 (1981-11-01), Makosch et al.
patent: 4353650 (1982-10-01), Sommargren
patent: 5017011 (1991-05-01), Lisson et al.
patent: 5094536 (1992-03-01), MacDonald et al.
patent: 5156461 (1992-10-01), Moslehi et al.
patent: 5159408 (1992-10-01), Waldenmaier et al.
patent: 5202748 (1993-04-01), MacDonald et al.
patent: 5232547 (1993-08-01), Drowley et al.
patent: 5293215 (1994-03-01), Pfendler et al.

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