Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2007-07-10
2007-07-10
Hirshfeld, Andrew H. (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S762010
Reexamination Certificate
active
11412644
ABSTRACT:
An FET-characteristic measuring system applies a pulse output from a pulse generator to the gate of an FET in order to measure drain current flowing through the FET. The pulse has a voltage based on a set voltage. The measuring system includes a divider for dividing the pulse output from the pulse generator into a first pulse applied to the gate of the FET and a second pulse for voltage measurement; a voltage measuring device for measuring a voltage of the second pulse; and a set-voltage adjusting device for determining, based on the voltage of the second pulse, a target set voltage for the pulse generator to apply a pulse having a desired gate application voltage to the FET and for adjusting the set voltage to the target set voltage so that a voltage of the first pulse is equal to the desired gate application voltage.
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K. A. Jenkins and J. Y-C. Sun, “Measurement of I-V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating”,IEEE Electron Device Letters, vol. 16, No. 4, Apr. 1995, p. 145 to 147.
International Search Report dated Aug. 1, 2006 based on PCT application No. PCT/JP2006/308966.
Agilent Technologie,s Inc.
Dole Timothy J.
Hirshfeld Andrew H.
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