System for limiting power dissipation in a power transistor to l

Details System for limiting power dissipation in a power transistor to l System for limiting power dissipation in a power transistor to l

1977-09-16

1979-03-27

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 35, 357 36, 307297, 307310, H01L 2356, H01L 2966, H01L 2972

Patent

active

041469038

ABSTRACT:
A system for limiting power dissipation in a power transistor to less than a destructive level is disclosed. The power transistor includes a base and a power emitter in the base. The system includes a sense emitter positioned close to the power emitter in the base and a reference emitter positioned in a base at a remote position that would not be heated by the heat dissipated by the power emitter for providing an indication of the temperature gradient between the power emitter and the remote position induced by power dissipated in the power emitter by sensing the voltage difference between the sense emitter and the reference emitter. The system further includes a differential amplifier responsive to the indication of the temperature gradient for limiting power dissipation in the power transistor by reducing the power provided to the power transistor when the indication reaches a predetermined level.

REFERENCES:
patent: 3017520 (1962-01-01), Maupin
patent: 3704398 (1972-11-01), Fukino
patent: 3761787 (1973-09-01), Davis et al.
patent: 3958267 (1976-05-01), Frederiksen et al.
patent: 3975648 (1976-08-01), Tober et al.
patent: 4028564 (1977-06-01), Streit et al.
IBM Technical Disclosure Bulletin, vol. 18, No. 10, Mar. 1976, Lateral PNP Structure by Park et al., p. 3254.
IBM Technical Disclosure Bulletin, vol. 16 No. 11, Apr. 1974, Power Transistor by Gillett, p. 3642.

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