System for laser removal of excess material from a semiconductor

Details System for laser removal of excess material from a semiconductor System for laser removal of excess material from a semiconductor

1986-04-28

1988-06-21

Albritton, C. L.

Electric heating

Metal heating

By arc

219121LJ, 219121FS, 219121LY, B23K 2616

Patent

active

047526688

ABSTRACT:
A system for removing excess material from a semiconductor wafer employs an excimer laser for ablative photocomposition. A wafer is positioned on an X-Y stage that is computer controlled to position the wafer at points where the laser may be focused to remove excess material whether over alignment marks or identified contamination. The laser passes through a vacuum chamber which by generating an inward laminar flow constrains any particulate contamination resulting from the ablative photodecomposition from spreading. This material is removed by the vacuum system.

REFERENCES:
patent: 3569660 (1971-03-01), Houldcroft
patent: 3866398 (1975-02-01), Vernon, Jr. et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4414059 (1983-11-01), Blum et al.
patent: 4504726 (1985-03-01), Hosaka et al.
patent: 4532401 (1985-07-01), Shiozaki et al.
patent: 4564739 (1986-07-01), Mattelin
patent: 4577958 (1986-03-01), Phillips

Affiliated with

Also associated with

Rating

System for laser removal of excess material from a semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System for laser removal of excess material from a semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System for laser removal of excess material from a semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-930625