System for integrating a circuit on an isolation layer and...

Details System for integrating a circuit on an isolation layer and... System for integrating a circuit on an isolation layer and...

2006-03-14

2006-03-14

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S619000, C257S620000, C438S113000, C438S155000, C438S294000, C438S352000, C438S353000, C438S455000, C438S458000

Reexamination Certificate

active

07012319

ABSTRACT:
A method for integrating a system on an isolation layer. A first isolation substrate including a first circuit deposition region and a first substrate-combining region, and a second isolation substrate including a second circuit deposition region and a second substrate-combining region are provided. Next, a first circuit and a second circuit are respectively formed on the first circuit deposition region and the second circuit deposition region. Next, substrate-connecting elements are formed to connect the first substrate-combining region to the second substrate-combining region. Finally, electrical connecting elements are formed to electrically connect the first circuit and the second circuit.

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