System for in-situ generation of fluorine radicals and/or...

Details System for in-situ generation of fluorine radicals and/or... System for in-situ generation of fluorine radicals and/or...

2005-01-11

2005-01-11

Wong, Edna (Department: 1753)

Chemistry of inorganic compounds

Halogen or compound thereof

Binary fluorine containing compound

C423S492000, C422S022000, C422S024000, C204S157480

Reexamination Certificate

active

06841141

ABSTRACT:
A system for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen compounds XFn(wherein X is Cl, Br, or I, and n is an odd integer). Such system comprises a fluorine source, a halogen source for supplying halogen species other than fluorine, a chamber for mixing fluorine with halogen species other than fluorine, and an energy source to supply energy to such chamber to facilitate reaction between fluorine and the halogen species other than fluorine. The chamber may be a semiconductor processing chamber, wherein the in situ generated fluorine radicals and/or fluorine-containing interhalogens are employed for cleaning the processing chamber.

REFERENCES:
patent: 3876754 (1975-04-01), Pursley
patent: 5565038 (1996-10-01), Ashley
patent: 2001189273 (2001-07-01), None
patent: 2001267241 (2001-09-01), None
*With JPO translation.*
Y. Saito, et al., “Plasmaless Cleaning Process of Silicon Surface Using Chlorine Trifluoride”, Applied Physics Letters, vol. 56(8), pp. 1119-1121 (1990), no month.
D.E. Ibbotson, et al., “Plasmaless Dry-Etching of Silicon with Fluorine-Containing Compounds”, Journal of Applied Physics, vol. 56(10), pp. 2939-2942 (1984), no month.

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