Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2009-03-11
2011-10-18
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S778000, C257SE21499
Reexamination Certificate
active
08039957
ABSTRACT:
A system for improving flip chip performance is provided. In one embodiment, the invention relates to an assembly configured to improve performance of a flip chip device, the assembly including a semiconductor die having an active surface and a back surface, the active surface including a plurality of conductive pads, an interposer substrate having a first surface in electrical contact with the active surface of the semiconductor die and a second surface, a space between the active surface of the semiconductor die and the first surface of the interposer substrate, where the space is essentially free of underfill material, and a carrier substrate having a top surface in electrical contact with the second surface of the interposer.
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Gilleo, Ken, http://www.flipchips.com/gilleoUF.html; “Underfill Update: NUF, MUF, WUF, and Other Stuff”, Oct. 22, 2008, 4 pages.
Riley, George A., http://www.flipchips.com/tutorial01.html, “Introduction to Flip Chip: What, Why, How”, Oct. 22, 2008, 6 pages.
Heinrich Ethan Santosh
Tonomura Samuel Doug
Christie Parker & Hale LLP
Potter Roy
Raytheon Company
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