System for igniting and controlling a wafer processing plasma

Details System for igniting and controlling a wafer processing plasma System for igniting and controlling a wafer processing plasma

1984-07-20

1985-12-10

Metz, Andrew H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192E, 156345, 156643, C23C 1500

Patent

active

045578192

ABSTRACT:
A circuit for impedance matching an RF source to a plasma load comprises an impedance magnitude control shunted with a parallel-resonant tank circuit to provide a phase control. A DC-blocking capacitor and RF filter are used to monitor the self-bias voltage on a workpiece in the plasma. An ignition control is used to provide prompt ignition of the plasma and a rotating magnet is used to stabilize the plasma.

REFERENCES:
patent: 3569777 (1971-03-01), Beaudry
patent: 3616405 (1971-10-01), Beaudry
patent: 3704219 (1972-11-01), McDowell
patent: 3767551 (1973-10-01), Lang, Jr. et al.
patent: 3887451 (1975-06-01), Cuomo et al.
patent: 4284489 (1981-08-01), Weber
patent: 4284490 (1981-08-01), Weber
patent: 4333814 (1982-06-01), Kuyel
patent: 4496448 (1985-01-01), Tai et al.

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