Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-03-16
2008-09-02
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S765000
Reexamination Certificate
active
07420277
ABSTRACT:
The present disclosure provides a method and system for heat dissipation in semiconductor devices. In one example, an integrated circuit semiconductor device includes a semiconductor substrate; one or more metallurgy layers connected to the semiconductor substrate, and each of the one or more metallurgy layers includes: one or more conductive lines; and one or more dummy structures between the one or more conductive lines and at least two of the one or more dummy structures are connected; and one or more dielectric layers between the one or more metallurgy layers.
REFERENCES:
patent: 5905289 (1999-05-01), Lee
patent: 6225697 (2001-05-01), Iguchi
patent: 2004/0195670 (2004-10-01), Landis
patent: 2005/0035457 (2005-02-01), Tomita et al.
Peter Van Zant, Microchip Fabrication, 2000, McGraw-Hill, pp. 398-401.
Chen Hsien-Wei
Cheng Yi-Lung
Jeng Shin-Puu
Yeh Jiun-Lin
Haynes & Boone LLP
Lewis Monica
Taiwan Semiconductor Manufacturing Company Ltd
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