System for etching polysilicon in fabricating semiconductor devi

Details System for etching polysilicon in fabricating semiconductor devi System for etching polysilicon in fabricating semiconductor devi

1997-09-12

2000-12-12

Hendricks, Keith

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118715, C23F 102, C23C 1600

Patent

active

06159332&

ABSTRACT:
A system for etching polysilicon in fabricating a semiconductor device is disclosed, which can prevent contamination of a wafer with polymers formed during a polysilicon etching process in which the polysilicon coated on the wafer is selectively etched. The system includes a reaction chamber having a wafer chuck placed therein on which a wafer is loaded for proceeding an etching process, a passage for discharging a reaction gas from the reaction chamber, a vacuum pump disposed below one side of the passage for pumping out the gas inside of the reaction chamber, a pressure control valve disposed at an inlet to the vacuum pump for controlling a flow rate of the gas being pumped, and a valve driving motor for driving the pressure control valve.

REFERENCES:
patent: 5758680 (1998-06-01), Kavel et al.
patent: 5759214 (1998-06-01), Ohmi et al.
patent: 5777300 (1998-07-01), Homma et al
patent: 5874012 (1999-02-01), Kanai et al.
patent: 5904567 (1999-05-01), Yamazaki

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