System for etching a metal film on a semiconductor wafer

Details System for etching a metal film on a semiconductor wafer System for etching a metal film on a semiconductor wafer

1983-02-17

1984-07-31

Valentine, Donald R.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156627, 156665, 2041292, 2041293, 324 715, C23F 102, C25F 304, C25F 312

Patent

active

044628560

ABSTRACT:
A system is adapted to etch an aluminium film on a semiconductor wafer into a predetermined pattern by immersing the film in an etching solution. The system comprises a voltage detecting circuit for detecting a voltage created between a platinum electrode and the aluminium film on the semiconductor wafer which are immersed in the etching solution, a comparator for comparing a reference voltage with the voltage detected by the voltage detecting circuit to produce an output signal, and a timer for starting a time count operation upon receipt of the output signal from the comparator and for producing an etching completion signal when it continuously receives the output signal from the comparator for a predetermined time period.

REFERENCES:
patent: 3755026 (1973-08-01), Reynolds
patent: 3874959 (1975-04-01), Hoekstra et al.
patent: 3943043 (1976-03-01), Billington et al.
patent: 4058438 (1977-11-01), Russell
patent: 4229264 (1980-10-01), Graunke
patent: 4336111 (1982-06-01), Graunke
patent: 4338157 (1982-07-01), Kanda

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