Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Complementary bipolar transistors
Patent
1998-07-02
2000-03-07
Chang, Joni
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Complementary bipolar transistors
438236, 257344, H01L 218228
Patent
active
060339640
ABSTRACT:
Generally, decreasing the length of the channel in a CMOS transistor increases the speed of the transistor. However, the degree that the channel can be minimized is limited due to Hot Carrier Injection ("HCI"), which is related to the drain to source voltage and channel length. The present invention increases the speed of a circuit by decreasing the channel length of subset of transistors in the circuit. The subset is chosen by identifying instances where more than one transistor in series is used to discharge a capacitance. Those transistors are subject to lower drain to source voltages; therefore, the channel length can be reduced without suffering from the effects of HCI.
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Advanced Micro Devices , Inc.
Chang Joni
Lee Calvin
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