System for detecting unevenness degree of surface of semiconduct

Details System for detecting unevenness degree of surface of semiconduct System for detecting unevenness degree of surface of semiconduct

1996-03-14

1998-08-18

Font, Frank G.

Optics: measuring and testing

By polarized light examination

With light attenuation

356376, 356237, 250562, G01B 1130

Patent

active

057964840

ABSTRACT:
In a system for detecting a degree of unevenness of a surface of a semiconductor device, the surface is irradiated with light having a wavelength of approximately 240 nm to 500 nm. The degree of unevenness of the surface is determined in accordance with an intensity of reflected light from the surface.

REFERENCES:
patent: 4511800 (1985-04-01), Harbeke et al.
patent: 4547073 (1985-10-01), Kugimiya
patent: 5125740 (1992-06-01), Sato et al.
patent: 5134303 (1992-07-01), Blech et al.
"Device application and structureobservation for hemispherical grained Si" Watanabe et al Journal of Applied Physics; vol. 71; No. 7; Apr. 1, 1992; pp. 3538-3543.

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