System for depositing a film by modulated ion-induced atomic...

Details System for depositing a film by modulated ion-induced atomic... System for depositing a film by modulated ion-induced atomic...

2011-01-18

2011-01-18

Cleveland, Michael (Department: 1712)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S123000, C427S250000, C438S485000, C438S687000

Reexamination Certificate

active

07871676

ABSTRACT:
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

REFERENCES:
patent: 5916365 (1999-06-01), Sherman
patent: 6569501 (2003-05-01), Chiang et al.
patent: 2002/0081381 (2002-06-01), DelaRosa et al.

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