System for controlling the threshold setting of a field effect m

Details System for controlling the threshold setting of a field effect m System for controlling the threshold setting of a field effect m

1974-05-03

1976-04-20

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307228, 328 57, 307251, 307255, 307262, 307264, 307279, H03K 500

Patent

active

039522113

ABSTRACT:
Apparatus and system for controlling the gate threshold settings of MNOS memory devices is disclosed. Positive or negative pulses depending on turn-on or turn-off of relatively large amplitude and relatively low frequency are applied to the gate of the MNOS device whose threshold is to be set and to whose gate a bias value equal to the desired setting has been applied. A feed back circuit, in response to the change in current conduction condition of the test MNOS device caused by the application of the pulses, reduces the magnitude of the pulses to a low value as the gate threshold value reaches the desired set value.

REFERENCES:
patent: 3591852 (1971-07-01), Chen
patent: 3624415 (1971-11-01), Atkins et al.
patent: 3657575 (1972-04-01), Taniguchi et al.
patent: 3713111 (1973-01-01), Ross
patent: 3714470 (1973-01-01), Goldberg
patent: 3723762 (1973-03-01), Nakaya

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