System for continuously washing and film-forming a semiconductor

Details System for continuously washing and film-forming a semiconductor System for continuously washing and film-forming a semiconductor

1993-02-05

1994-04-19

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

156345, 118725, C23C 1600

Patent

active

053036719

ABSTRACT:
A system for cleaning and film-forming a semiconductor wafer continuously comprises a washing section for removing native oxide from the surface of the wafer while applying hydrofluoric acid to the silicon wafer, a load lock chamber located adjacent to the washing section and filled with the atmosphere of non-oxidizing gas, a film-forming section communicated with and shielded from the load lock chamber by a gate valve to form film on that face of the wafer which is to be processed, a first transfer robot for transferring the wafer between the washing section and the load lock chamber, and a second transfer robot for transferring the wafer between the load lock chamber and the film-forming section. Film is formed on the wafer in the film-forming section after the native oxide is removed from the wafer.

REFERENCES:
patent: 4592306 (1986-06-01), Gallego

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