System for chemical vapor deposition at ambient temperature...

Pumps – Expansible chamber type – Having pumping chamber pressure responsive distributor

Reexamination Certificate

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C427S575000, C427S576000, C427S577000, C118S7230MR, C118S728000

Reexamination Certificate

active

06851939

ABSTRACT:
A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided.

REFERENCES:
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patent: 4831963 (1989-05-01), Saito et al.
patent: 5279866 (1994-01-01), Bourget et al.
patent: 5312783 (1994-05-01), Takasaki et al.
patent: 6156164 (2000-12-01), Smolanoff et al.
patent: 6214183 (2001-04-01), Maishev et al.
patent: 20030026921 (2003-02-01), Ueno et al.

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