Data processing: measuring – calibrating – or testing – Calibration or correction system – Temperature
Reexamination Certificate
2011-06-07
2011-06-07
Lau, Tung S (Department: 2857)
Data processing: measuring, calibrating, or testing
Calibration or correction system
Temperature
Reexamination Certificate
active
07957926
ABSTRACT:
A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.
REFERENCES:
patent: 2792484 (1957-05-01), Gurewitsch et al.
patent: 4764026 (1988-08-01), Powell
patent: 4841150 (1989-06-01), Walter
patent: 4890245 (1989-12-01), Yomoto et al.
patent: 4890933 (1990-01-01), Amith et al.
patent: 5098199 (1992-03-01), Amith
patent: 5102231 (1992-04-01), Loewenstein et al.
patent: 5118200 (1992-06-01), Kirillov et al.
patent: 5167452 (1992-12-01), Amith et al.
patent: 5170041 (1992-12-01), Amith et al.
patent: 5180226 (1993-01-01), Moslehi
patent: 5208643 (1993-05-01), Fair
patent: 5229303 (1993-07-01), Donnelly, Jr. et al.
patent: 5258602 (1993-11-01), Naselli et al.
patent: 5308161 (1994-05-01), Stein
patent: 5350899 (1994-09-01), Ishikawa et al.
patent: 5388909 (1995-02-01), Johnson et al.
patent: 5467732 (1995-11-01), Donnelly, Jr. et al.
patent: 5508934 (1996-04-01), Moslehi et al.
patent: 5568978 (1996-10-01), Johnson et al.
patent: 5683180 (1997-11-01), De Lyon et al.
patent: 5773316 (1998-06-01), Kurosaki et al.
patent: 5820942 (1998-10-01), Singh et al.
patent: 5830277 (1998-11-01), Johnsgard
patent: 5874711 (1999-02-01), Champetier et al.
patent: 5930456 (1999-07-01), Vosen
patent: 5960158 (1999-09-01), Gat et al.
patent: 5970214 (1999-10-01), Gat
patent: 5970382 (1999-10-01), Shah
patent: 5980637 (1999-11-01), Singh et al.
patent: 5997175 (1999-12-01), Champetier et al.
patent: 6027244 (2000-02-01), Champetier et al.
patent: 6034357 (2000-03-01), Guardado
patent: 6056434 (2000-05-01), Champetier
patent: 6062729 (2000-05-01), Ni et al.
patent: 6074087 (2000-06-01), Chen et al.
patent: 6075922 (2000-06-01), Tay et al.
patent: 6082892 (2000-07-01), Adel et al.
patent: 6116779 (2000-09-01), Johnson et al.
patent: 6121580 (2000-09-01), Tsukamoto
patent: 6130415 (2000-10-01), Knoot
patent: 6151446 (2000-11-01), Hunter et al.
patent: 6158310 (2000-12-01), Goss et al.
patent: 6160242 (2000-12-01), Guardado
patent: 6168311 (2001-01-01), Xiao et al.
patent: 6174081 (2001-01-01), Holm
patent: 6174651 (2001-01-01), Thakur
patent: 6200023 (2001-03-01), Tay et al.
patent: 6200634 (2001-03-01), Johnsgard et al.
patent: 6204484 (2001-03-01), Tay et al.
patent: 6210484 (2001-04-01), Hathaway
patent: 6222990 (2001-04-01), Guardado et al.
patent: 6281141 (2001-08-01), Das et al.
patent: 6284048 (2001-09-01), Van Bilsen et al.
patent: 6293696 (2001-09-01), Guardado
patent: 6310328 (2001-10-01), Gat
patent: 6359263 (2002-03-01), Tay et al.
patent: 6369363 (2002-04-01), Hauf et al.
patent: 6403923 (2002-06-01), Tay et al.
patent: 6514876 (2003-02-01), Thakur et al.
patent: 6515261 (2003-02-01), Smargiassi et al.
patent: 6559424 (2003-05-01), O'Carroll et al.
patent: 6561694 (2003-05-01), Lerch et al.
patent: 6610967 (2003-08-01), Gat
patent: 6638876 (2003-10-01), Levy et al.
patent: 6647350 (2003-11-01), Palfenier et al.
patent: 6679946 (2004-01-01), Jackson et al.
patent: 6717158 (2004-04-01), Gat et al.
patent: 6830942 (2004-12-01), Alers et al.
patent: 6891124 (2005-05-01), Denton et al.
patent: 6953281 (2005-10-01), Hauenstein
patent: 7112763 (2006-09-01), Hunter et al.
patent: 7543981 (2009-06-01), Timans
patent: 7734439 (2010-06-01), Timans
patent: 2002/0005400 (2002-01-01), Gat
patent: 2002/0017618 (2002-02-01), Gat et al.
patent: 2002/0104619 (2002-08-01), Koren et al.
patent: 2002/0137311 (2002-09-01), Timans
patent: 2002/0185053 (2002-12-01), Fei et al.
patent: 2003/0031793 (2003-02-01), Chang et al.
patent: 2003/0124820 (2003-07-01), Johnsgard et al.
patent: 2003/0209326 (2003-11-01), Lee et al.
patent: 2003/0235983 (2003-12-01), Li et al.
patent: 2004/0061057 (2004-04-01), Johnson et al.
patent: 2006/0086713 (2006-04-01), Hunter et al.
patent: 2009/0161724 (2009-06-01), Timans
patent: WO 9919700 (1999-04-01), None
patent: WO 0145501 (2001-06-01), None
patent: WO 0145501 (2001-06-01), None
“A Method for Studying Thermal Reflection in Semiconductors,” V.S. Vavilov, V.S. Ivanov, D.B. Kopylovskii, and V.B. Stopachinskii, Soviet Physics—Solid State, vol. 12, No. 6, Dec. 1970, pp. 1329-1331.
“Fiber-optic Instrument for Temperature Measurement,” K. Kyuma, S. Tai, T. Sawada, and N. Munoshita, IEEE J. Quantum Electron. 18, (1982), p. 676.
“Infra-Red Transmission Spectroscopy of GaAs During Molecular Beam Epitaxy,” E.S. Hellman & J.S. Harris, Jr., Journal of Crystal Growth 81 (1987), pp. 38-42.
“Silicon Temperature Measurement by Infrared Transmission for Rapid Thermal Processing Applications,” J.C. Sturm, P.V. Schwartz, and P.M. Garone, Applied Physics Letter 56, Mar. 5, 1990, pp. 961-963.
“Silicon Temperature Measurement by Infrared Absorption: Fundamental Process and Doping Effects,” James C. Strum and Casper M. Reaves, IEEE Transactions on Electron Devices, vol. 39, No. 1, Jan. 1992, pp. 81-88.
“A New Optical Temperature Measurement Technique for Semiconductor Substrates in Molecular Beam Epitaxy,” M.K. Weilmeier, K.M. Colbow, T. Tiedje, T. VanBuren, and Li Xu, Can. J. Phys., vol. 69, 1991, pp. 422-426.
“The Experimental Determination of the Temperature Dependence of the Total Emissivity of GaAs Using a New Temperature Measurement Technique,” P.J. Timans, J. Appl. Phys. 72, Jul. 15, 1992, pp. 660-670.
“Precision of Noninvasive Temperature Measurement by Diffuse Reflectance Spectroscopy,” T.P. Pearsall, Steven R. Saban, James Booth, Barrett T. Beard, Jr., and S.R. Johnson, Rev. Sci. Instrum., vol. 66, No. 10, Oct. 1995, pp. 4977-4980.
“Noncontact Temperature Monitoring of Semiconductors by Optical Absorption Edge Sensing,” Michael E. Adel, Yaron Ish-Shalom, Shmuel Mangan, and Dario Cabib, SPIE, vol. 1803, 1992, pp. 290-298.
“Emissivity of Silicon at Elevated Temperatures,” P.J. Timans, J. Appl. Phys. vol. 74, No. 10, Nov. 15, 1993, pp. 6353-6364.
“Variations in Substrate Temperature Induced by Molecular-Beam Epitaxial Growth on Radiatively Heated Substrates,” B.V. Shanabrook, J.R. Waterman, J.L. Davis, R.J. Wagner, and D.S. Katzer, J.Vac. Sci. Technol. B, vol. 11, No. 3, May/Jun. 1993, pp. 994-997.
“Temperature Measurement of Metal-Coated Silicon Wafers by Double-Pass Infrared Transmission,” Charles W. Cullen and James C. Sturm, IEEE Transactions on Semiconductor Manufacturing, vol. 8, No. 3, Aug. 1995, pp. 346-351.
AN110, application notes, Radiation Thermonetry in Molecular Beam Epitaxy, p. 1-8, 1998.
Theresa L. Jeste, Specific PVMAT R & D on Siemens CZ Silicon Product Manufacturing, IEEE 2000, p. 1399-1402.
Chan, Shu-Park section 1 circuits: the electrical Engineering Handbook, Boxa Raton, CRC Press LLC 2000, section equation 1.18-1.20, Defining terms.
Nitto Technical Report, vol. 38, Dec. 2, 2000, p. 42-44.
WO 01/50109 A2, Denton Medona, Publication Date Jul. 12, 2001.
Defination of micrometer, Retrieved from the Internet:<http://www.pcmag.com/encyclopedia—temp/0,2542,t=micrometer&i=46949,00asp>.Aug. 7, 2006, p. 1.
Definition of spectrometer, Retrieved from the Internet:<http://en.vvipipedia.org/wiki/Spectroscope., Aug. 7, 2006, p. 1-3.
Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy, Wang et al., J. Vac. Sci. Technol. B., vol. 15, No. 1, Jan./Feb. 1997, pp. 116-121.
Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy, Thibado et al., J. Vac. Sci. Technol. B., vol. 17, No. 1, Jan./Feb. 1999, pp. 253-256.
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy, Johnson
Dority & Manning PA
Lau Tung S
Mattson Technology Inc.
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