Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-03-15
2005-03-15
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030
Reexamination Certificate
active
06868012
ABSTRACT:
The invention provides a non-volatile semiconductor that prevents an output from a charge pump from lowering below an operation voltage even in a read operation, and reduces the capacity of a pool capacitor to thereby reduce the size of the apparatus. The invention can include a strong charge pump that generates 5.0V and a power supply voltage of 8.0V. The power supply voltage is supplied to constant voltage circuits. The constant voltage circuits generate voltages corresponding to the respective read, program and erase operation modes. The operation voltage required at the time of programming is 8.0V. In contrast, the operation voltage required at the time of reading is 3.0V. In other words, the charge pump outputs a voltage sufficiently higher than the operation voltage at the time of reading. With this, the output of the charge pump has a margin, such that, an output greater than the operation voltage can always be secured even when the output lowers through setting of the operation voltages. Accordingly, the capacity of the charge capacitor that pools the output of the charge pump can be reduced, and thus the apparatus can be reduced in size.
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Auduong Gene N.
Seiko Epson Corporation
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